MAGNEHELIC® DIFFERENTIAL PRESSURE GAGES Indicate Positive, Negative or Differential, Accurate within 1%

BENEFITS/FEATURES • Easy to read gage through undistorted plastic face permits viewing from far away • Patented design provides quick response to pressure changes means no delay in assessing critical situations • Durable and rugged housing and high-quality components combine to provide longserv

文件：1.84653 Mbytes 页数：4 Pages

DWYER

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOD464 is Pb-free (meets ROHS

文件：129.139 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 105V(Min) • Static Drain-Source On-Resistance : RDS(on) = 28mΩ (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：309.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

文件：983.89 Kbytes 页数：8 Pages

VBSEMI

微碧半导体