High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

文件：44.45 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

文件：3.72956 Mbytes 页数：8 Pages

TUOFENG

拓锋半导体

Complementary High Density Trench MOSFET

文件：317.57 Kbytes 页数：7 Pages

TUOFENG

拓锋半导体

Binary reduction valve

文件：99.4 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

N- and P-Channel 30 V (D-S) MOSFET

文件：1.22669 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

TO-3 POWER TRANSISTOR SOCKET & MOUNTING KITS

文件：413.91 Kbytes 页数：1 Pages

KEYSTONE

Keystone Electronics Corp.

丝印：4606；Package：DFN3030B-8L；30V Complementary Enhancement Mode MOSFET

Features  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：1.26305 Mbytes 页数：9 Pages

PANJIT

強茂

低压MOS

CXW

诚芯微科技

丝印：4606；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：108.36 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：4606；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

文件：1.54705 Mbytes 页数：9 Pages

LEIDITECH

雷卯电子