丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 页数：4 Pages

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丝印：4430；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 页数：5 Pages

万国半导体

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 页数：5 Pages

台舟电子

丝印：4438；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 8.2 A (VGS = 10V) ● RDS(ON)

文件：1.26337 Mbytes 页数：4 Pages

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丝印：4438；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 8.2 A (VGS = 10V) ● RDS(ON)

文件：1.47786 Mbytes 页数：4 Pages

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丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | © Rosczmogesmioy | ® Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 页数：5 Pages

台舟电子

丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.21507 Mbytes 页数：4 Pages

科信电子

丝印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 页数：4 Pages

科信电子

丝印：4438；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 8.2 A (VGS = 10V) ● RDS(ON)

文件：1.26337 Mbytes 页数：4 Pages

科信电子

丝印：4438；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 8.2 A (VGS = 10V) ● RDS(ON)

文件：1.47786 Mbytes 页数：4 Pages

科信电子