丝印：42P；Package：DFN2020-3；1-Line High Power TVS Diode

文件：1.07109 Mbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：42P；Package：DFN2020-3；1-Line High Power TVS Diode

文件：2.42243 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：42P4LLF6；Package：PowerFLAT；P-channel 40 V, 0.0155 廓 typ.,42 A, STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

文件：451.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：935.23 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

P-Channel 30 V (D-S) MOSFET

文件：986.9 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

BASE PARA CI 42 PINES MILIMÉTRICA

文件：356.46 Kbytes 页数：2 Pages

AGELECTRONICA

BASE PARA CI 54 PINES MILIMÉTRICA

文件：356.27 Kbytes 页数：2 Pages

AGELECTRONICA

BASE PARA CI 56 PINES MILIMÉTRICA

文件：356.68 Kbytes 页数：2 Pages

AGELECTRONICA

BASE PARA CI 64 PINES MILIMÉTRICA

文件：356.63 Kbytes 页数：2 Pages

AGELECTRONICA

25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches

文件：56.88 Kbytes 页数：4 Pages

TI

德州仪器