丝印：40T120FDS；Package：TO-247；High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

文件：231.22 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

文件：471.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

文件：628.68 Kbytes 页数：9 Pages

ONSEMI

安森美半导体