SCHOTTKY RECTIFIER

Description/Features This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converte

文件：231.72 Kbytes 页数：8 Pages

IRF

Schottky Rectifier

FEATURES · High frequency operation · Low forward voltage drop APPLICATIONS · Converters · Switching power · Freewheeling diodes, and reverse battery protection

文件：322.16 Kbytes 页数：2 Pages

ISC

无锡固电

SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

文件：398.24 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

Schottky Rectifier

FEATURES · High frequency operation · Low forward voltage drop APPLICATIONS · Converters · Switching power · Freewheeling diodes, and reverse battery protection

文件：349.51 Kbytes 页数：2 Pages

ISC

无锡固电

High Performance Schottky Generation 5.0, 2 x 20 A

FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench t

文件：144.51 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon Controlled Rectifier

文件：165.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SCRs

文件：62.85 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifier

文件：159.86 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Silicon Controlled Rectifier

文件：165.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Silicon Controlled Rectifier

文件：159.86 Kbytes 页数：3 Pages

MICROSEMI

美高森美