丝印：4041SP；Package：SO8；60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4041SPN；Package：SO8；60 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：1.22868 Mbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司