Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

文件：190.98 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

• Low noise figure.\n   NF = 1.0 dB typ. at f = 200 MHz\n• Capable of low voltage operationApplication\n  UHF / VHF RF amplifier;

Renesas

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

文件：190.98 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier

文件：54.85 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

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