3A, 650V N-CHANNEL POWER MOSFET

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Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

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3A , 650V N-CHANNEL POWER MOSFET

The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications in power • RDS(ON) = 3.8 Ω @VGS = 10V \n• Ultra low gate charge ( typical 10nC )   \n• Low reverse transfer capacitance ( CRSS = typical 5.5pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

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N-CHANNEL POWER MOSFET

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3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching application

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N65K-MK is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat

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