3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

文件：399.36 Kbytes 页数：8 Pages

UTC

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N-CHANNEL POWER MOSFET

DESCRIPTION 3N60 3N65 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

文件：648.61 Kbytes 页数：7 Pages

ZSELEC

淄博圣诺

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

文件：148.75 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

3A , 650V N-CHANNEL POWER MOSFET

The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppl • RDS(ON) = 3.8 Ω @VGS = 10 V \n• Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

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Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.07621 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08662 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

文件：399.36 Kbytes 页数：8 Pages

UTC

友顺

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

文件：399.36 Kbytes 页数：8 Pages

UTC

友顺

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

文件：399.36 Kbytes 页数：8 Pages

UTC

友顺

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

文件：399.36 Kbytes 页数：8 Pages

UTC

友顺