OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N1012；Package：PG-TO262-3-1；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌