BCV62C

Marking：3Ls；Package：SOT-143；PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

PreliminaryData ●Tobeusedasacurrentmirror ●GoodthermalcouplingandVBEmatching ●Highcurrentgain ●Lowemitter-saturationvoltage

BCV62C

Marking：3Ls；Package：SOT-143；PNP Silicon Double Transistor

PNPSiliconDoubleTransistor •Tobeusedasacurrentmirror •GoodthermalcouplingandVBEmatching •Highcurrentgain •Lowcollector-emittersaturationvoltage •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCV62C

Marking：3L-；Package：SOT-143B；PNP general purpose double transistor

DESCRIPTION PNPdoubletransistorinaSOT143Bplasticpackage. NPNcomplement:BCV61. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.30V) •Matchedpair. APPLICATIONS •Foruseinapplicationswheretheworkingpointmustbeindependentoftemperature •Currentmirrors.

BZX84C15VDBZRQ1

Marking：3LMG；Package：SOT-23；BZX84Cx-Q1 Automotive Zener Voltage Regulator Diode in SOT-23

1Features •Totalpowerdissipation:250mW(max) •LowI/Ocapacitance:80pF(max) •Lowleakagecurrent:0.6μA(max) •Tolerance:±5% •Temperaturerange:-55°Cto+150°C •AEC-Q101qualified •Leadedpackageusedforautomaticoptical inspection(AOI) 2Applications •Voltagere

BZX84C27VDBZRQ1

Marking：3LNG；Package：SOT-23；BZX84Cx-Q1 Automotive Zener Voltage Regulator Diode in SOT-23

1Features •Totalpowerdissipation:250mW(max) •LowI/Ocapacitance:80pF(max) •Lowleakagecurrent:0.6μA(max) •Tolerance:±5% •Temperaturerange:-55°Cto+150°C •AEC-Q101qualified •Leadedpackageusedforautomaticoptical inspection(AOI) 2Applications •Voltagere

CDBAS340L-HF

Marking：3L45；Package：DO-214AC；Low VF SMD Schottky Barrier Rectifiers

-Built-instrainrelief -Metalsiliconjunctionwithguardring Features -Siliconepitaxialplanarchips -Foruseinlowvoltage,highfrequencyinvertors freewheelingandpolarityprotection -Highsurgeandcurrentcapability

DMN33D8LTQ-13

Marking：3LT；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate2KV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN33D8LTQissuitable

DMN33D8LTQ-7

Marking：3LT；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate2KV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN33D8LTQissuitable

RD3L140SPTL1-TP

Marking：3L140SP；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features *Vos=-60V,lo=-16A Ros52mQ@Vos=-10V(Typ)

STF3LN80K5

Marking：3LN80K5；Package：TO-220FP；N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog