BC858CW

Marking：3L；Package：SOT-323；Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

BCV62C

Marking：3L；Package：SOT143B；PNP general-purpose double transistors

Featuresandbenefits *Lowcurrent(max.100mA) *Lowvoltage(max.30V) *Matchedpairs *AEC-Q101qualified *SmallSMDplasticpackage

BD5228NVX

Marking：3l；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

GeneralDescription ROHM'sFreeTimeDelaySettingCMOSVoltage DetectorICsarehighlyaccurate,withultra-lowcurrent consumptionfeaturethatusesCMOSprocess.Delay timesettingcanbecontrolbyanexternalcapacitor.The lineupincludesN-channelopendrainoutput(BD52xx NVX-2C)and

BZX884S-B68

Marking：3L；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B68-Q

Marking：3L；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

CPDH3V3U-HF

Marking：3L；Package：SOD-523；SMD ESD Protection Diode

-Lowcapacitance:0.4pF(typical). -Lowleakagecurrent. -Lowclampingvoltage. Features IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) -Transientprotectionforhigh-speeddatalines Cabledischargeevent(CDE) -Protectsonedata,controlline. -Ultr

ESD3.3V02DS-ULC

Marking：3L；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified UltrasmallSMDpackage Ultra-Lowcapacitance ProtectsOneBidirectionalI/Oline Lowclampingvoltage Workingvoltage:3.3V Lowleakagecurrent IEC61000-4-2(ESD):±25kV(airdischarge) ±20kV(contactdischarge); Applicatio

ESD3.3V02D-ULC

Marking：3L；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features UltrasmallSMDpackage Ultra-Lowcapacitance ProtectsOneBidirectionalI/Oline Lowclampingvoltage Workingvoltages:3.3V Lowleakagecurrent IEC61000-4-2(ESD):±25kV(airdischarge) ±20kV(contactdischarge); Applications USB3.0/USB3.1Interfaces HDMI1.4/HDMI2.0I

PMN50EPE

Marking：3L；Package：SOT457；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Logic-levelcompatible •Veryfastswitching •Electr

PTVS3V3D1BALYL-TP

Marking：3L；Package：DFN1006-2L；1-Line Bi-directional TVS Diode

Features @Ultrasmallpackage:1.0x0.6x0.5mm @Ultralowcapacitance:50pFtypical ®Ultralowleakage:nAlevel ®Lowoperatingvoltage:+3.3V oLowclampingvoltage ®2-pinleadlesspackage ®Complieswithfollowingstandards: ®—IEC61000-4-2(ESD)immunitytest Airdischarge:£30kV