BC858CQ

Marking：3L；Package：SOT-23；PNP General Purpose Amplifier

Features ●EpoxymeetsUL-94V-0flammabilityratingandhalogenfree ●MoistureSensitivityLevel1 ●HighConductance ●Partno.withsuffix“Q”meansAEC-Q101qualified Applications ●Generalpurposeswitchingandamplification

BC858CRF

250mW,PNPSmallSignalTransistor

BC858CRFG

250mW,PNPSmallSignalTransistor

BC858C-TP

PNPSmallSignalTransistor310mW

BC858CW

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon PbLead(Pb)-Free

BC858CW

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

BC858CW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC858CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC858CW

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

BC858CW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)