3K

型号：BC858BQ；Package：SOT-23；PNP General Purpose Amplifier

Features ●EpoxymeetsUL-94V-0flammabilityratingandhalogenfree ●MoistureSensitivityLevel1 ●HighConductance ●Partno.withsuffix“Q”meansAEC-Q101qualified Applications ●Generalpurposeswitchingandamplification

3K

型号：BC858BW；Package：SOT-323；Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

3K

型号：BC858C；Package：SOT-23；PNP Transistors

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

3K

型号：BCV62B；Package：SOT143B；PNP general-purpose double transistors

Featuresandbenefits *Lowcurrent(max.100mA) *Lowvoltage(max.30V) *Matchedpairs *AEC-Q101qualified *SmallSMDplasticpackage

3K

型号：BZX884S-B62；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

3K

型号：BZX884S-B62-Q；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

3K

型号：DESD1CAN2WQ-7；Package：SOT323；CAN BUS ESD PROTECTION DIODE

Features 150WPeakPowerDissipationperLine(8/20μsWaveform) ProvidesESDProtectionperIEC61000-4-2Standard: Air±23kV,Contact±23kV 2ChannelsofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFre

3K

型号：PBSS5120T；Package：SOT23；20 V, 1 A PNP low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements •CosteffectivealternativeforMOSFETsinspecificapplications. APPLICATIONS •Powermanage

3K

型号：PMN120ENE；Package：SOT457；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Logic-levelcompatible •Veryfastswitching •Electr

3K

型号：TDZ6V2J；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications Generalregulationfunctions Non-repetitivepeakreversepower dissipation:180W Lowdifferen