3EM

型号：KMBTH10；Package：SOT-23；NPN Transistors

■Features ●CollectorCurrentCapabilityIC=0.05A ●CollectorEmitterVoltageVCEO=25V

3EM

型号：MMBTH10；Package：SOT-23；NPN Transistors

■Features ●CollectorCurrentCapabilityIC=0.05A ●CollectorEmitterVoltageVCEO=25V

3EM

型号：MMBTH10；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Hightransitionfrequency. ●Powerdissipation.(PC=350mW). APPLICATIONS ●VHF/UHFTransistor.

3EM

型号：MMBTH10；Package：SOT-23；Plastic-Encapsulate Transistors

Features: VFH/UFHtransistor;

3EM

型号：MMBTH10；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Hightransitionfrequency. ●Powerdissipation.(PC=350mW). APPLICATIONS ●VHF/UHFTransistor.

3EM

型号：MMBTH10；Package：SOT-23；NPN Plastic-Encapsulate Transistors

3EM

型号：MMBTH10；Package：SOT-23；Silicon Epitaxial Planar Transistor

3EM.

型号：MMBTH10；Package：SOT-23；NPN-General use transistor 225mW 50mA 20V

Features DesignedforVHF/UHFAmplifierApplicationsandHighOutputVHFOscillators HighCurrentGainBandwidthProduct IdealforMixerandRFAmplifierApplicationswithcollectorcurrentsinthe100μA-30mARange