丝印：370N150；Package：TO-247；N-Channel Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free VDS =150 V, ID= 366A RDS(on)

文件：1.21008 Mbytes 页数：6 Pages

RECTRON

丽正国际

丝印：370B；Package：DO-214AA；SILICON ZENER DIODES

Features Low leakage current High reliability High peak reverse power dissipation Complete Voltage Range 3.3 to 200 Volts

文件：519.409 Kbytes 页数：4 Pages

SY

顺烨电子

丝印：3702C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection descriptio

文件：1.61367 Mbytes 页数：40 Pages

TI

德州仪器

丝印：3702C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection descriptio

文件：1.61367 Mbytes 页数：40 Pages

TI

德州仪器

丝印：3702C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection descriptio

文件：1.61367 Mbytes 页数：40 Pages

TI

德州仪器

丝印：3702C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection descriptio

文件：1.61367 Mbytes 页数：40 Pages

TI

德州仪器

丝印：3702C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection descriptio

文件：1.61367 Mbytes 页数：40 Pages

TI

德州仪器

丝印：3702Q1；Package：SOIC；FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS

FEATURES Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . −0.1 V to VCC + 5 V Supply Voltage Ra

文件：720.61 Kbytes 页数：19 Pages

TI

德州仪器

丝印：3702Q1；Package：SOIC；FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS

FEATURES Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . −0.1 V to VCC + 5 V Supply Voltage Ra

文件：720.61 Kbytes 页数：19 Pages

TI

德州仪器

丝印：3702Q1；Package：SOIC；FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS

FEATURES Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . −0.1 V to VCC + 5 V Supply Voltage Ra

文件：720.61 Kbytes 页数：19 Pages

TI

德州仪器