丝印：37；Package：DFN2020P3E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESD protect for one line with uni-directional
Provide transient protection for one line to IEC 61000-4-2 (ESD) ±30kV (air/contact) IEC 61000-4-4 (EFT) 80A (5/50ns) IEC 61000-4-5 (Lightning) 250A (8/20ms)
Suitable for, 4.5V and below, operating voltage applications
2.0mm x

文件：164.82 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：37；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to

文件：302.42 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：37；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：37；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：37；Package：SOT-416FL；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Co

文件：1.4523 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：37；Package：SOT-723；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Co

文件：1.4523 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：37；Package：SOT-323FL；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Co

文件：1.4523 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：37；Package：POWERDI323；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)

文件：191.02 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：37；Package：SOT-416；PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.91 Kbytes 页数：14 Pages

PHI

PHI

丝印：37；Package：SOT-416；PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：181.54 Kbytes 页数：14 Pages

恩XP