丝印：32179EFRZ；Package：QFN；QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, Low Power, RS-422 Transmitters

Features • IEC61000 ESD protection on RS-422 outputs . . . . ±16.5kV - Class 3 ESD level on all other pins . . . . . . . . . . .12kV HBM - High machine model ESD level on all pins . . . . . . . . . 700V • Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 5.5V • Speci

文件：1.51284 Mbytes 页数：21 Pages

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瑞萨

丝印：32179EIRZ；Package：QFN；QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, Low Power, RS-422 Transmitters

Features • IEC61000 ESD protection on RS-422 outputs . . . . ±16.5kV - Class 3 ESD level on all other pins . . . . . . . . . . .12kV HBM - High machine model ESD level on all pins . . . . . . . . . 700V • Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 5.5V • Speci

文件：1.51284 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：32179EIRZ；Package：QFN；QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, Low Power, RS-422 Transmitters

Features • IEC61000 ESD protection on RS-422 outputs . . . . ±16.5kV - Class 3 ESD level on all other pins . . . . . . . . . . .12kV HBM - High machine model ESD level on all pins . . . . . . . . . 700V • Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 5.5V • Speci

文件：1.51284 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：32168；Package：P-VQFN32-0505-0.50-002；5.8 GHz RF Transceiver for ETC including Modem/Wakeup

2. Application This IC can be used for ETC systems whose bit rate is 256 kbps or 512 kbps. 3. Features • Low current consumption • Fast boot sequence (Refer to Electrical Characteristics for details.) • Small package: P-VQFN32-0505-0.50-002, 5.0 mm × 5.0 mm square • Including Wakeup functi

文件：1.35417 Mbytes 页数：91 Pages

TOSHIBA

东芝

丝印：32169；Package：P-VQFN32-0505-0.50-002；5.8 GHz RF Transceiver for ETC including Modem/Wakeup

2. Application This IC can be used for ETC systems whose bit rate is 256 kbps or 512 kbps. 3. Features • Low current consumption • Fast boot sequence (Refer to Electrical Characteristics for details.) • Small package: P-VQFN32-0505-0.50-002, 5.0 mm × 5.0 mm square • Including Wakeup functi

文件：1.32088 Mbytes 页数：91 Pages

TOSHIBA

东芝

丝印：3217；Package：SSOP；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low distortion : IM3 = 50 dBc TYP. @ single-ended output, Vout = 0.7 Vp-p/tone • Wide AGC dynamic range : GCR = 53 dB TYP. • On-chip video amplifier : Vout = 1.0 Vp-p TYP. @ single-ended output • Supply voltage : VCC = 5.0 V TYP. • Packaged in 8-pin SSOP suitable for surface mounti

文件：403.16 Kbytes 页数：24 Pages

RENESAS

瑞萨

丝印：3218；Package：SSOP；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low distortion : IM3 = 50 dBc TYP. @ single-ended output, Vout = 0.7 Vp-p/tone • Wide AGC dynamic range : GCR = 53 dB TYP. • On-chip video amplifier : Vout = 1.0 Vp-p TYP. @ single-ended output • Supply voltage : VCC = 5.0 V TYP. • Packaged in 8-pin SSOP suitable for surface mounti

文件：403.16 Kbytes 页数：24 Pages

RENESAS

瑞萨

丝印：3210A；Package：DFN3x3-10L；Lithium ion battery charger

文件：1.29154 Mbytes 页数：12 Pages

AWINIC

艾为电子

丝印：3215A；Package：DFN3mm*3mm-12L；Switch, efficiency, 1.5 A, lithium battery charging control controller

文件：2.26091 Mbytes 页数：30 Pages

AWINIC

艾为电子

丝印：32173EFVZ；Package：16LdTSSOP；Telecom equipment

文件：1.41989 Mbytes 页数：21 Pages

RENESAS

瑞萨