丝印：3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.15872 Mbytes 页数：30 Pages

TI

德州仪器

丝印：3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器

丝印：3100L10；Package：TESOP-8；Dual N-Ch Enhancement Mode MOSFET

文件：375.42 Kbytes 页数：8 Pages

KODENSHI

可天士

丝印：3100L10；Package：TESOP-8M；Dual N-Ch Enhancement Mode MOSFET

文件：398.49 Kbytes 页数：8 Pages

KODENSHI

可天士

丝印：3100L10；Package：TESOP-8M；N-Ch Enhancement Mode MOSFET

文件：398.2 Kbytes 页数：8 Pages

KODENSHI

可天士