丝印：30P06P；Package：TO-252；-60V P-Channel MOSFET

Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature

文件：828 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：30P06P；Package：TO-252；-60V P-Channel MOSFET

Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Product Summary RDS(on) =75 m
VDS (V) = -60V ID = -30A (VGS = -10V) (VGS = -10V)

文件：448.59 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：30P06P；Package：TO-252；-60V P-Channel MOSFET

Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature

文件：828 Kbytes 页数：9 Pages

UMW

友台半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super

文件：638 Kbytes 页数：5 Pages

ADV

爱德微

P-Channel 60-V (D-S) MOSFET

文件：544.27 Kbytes 页数：5 Pages

BWTECH

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

文件：247.61 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉