N-CHANNEL SILICON POWER MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

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N-Channel 650 V (D-S) Power MOSFET

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微碧半导体

N-CHANNEL SILICON POWER MOSFET

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文件：130.93 Kbytes 页数：4 Pages

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