N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

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FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-CHANNEL SILICON POWER MOS-FET

FUJI

富士通

CONCEPT

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模块

Power Integrations

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