N-CHANNLEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power Applications ● UPS ● DC-DC converters ● General purpose power amplifier

文件：130.9 Kbytes 页数：4 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNLEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power Applications ● UPS ● DC-DC converters ● General purpose power amplifier

文件：130.9 Kbytes 页数：4 Pages

FUJI

富士通

CONCEPT

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模块

Power Integrations

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