2SK975TZ-E技术资料参数批发供应瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK975TZ-E	文件：75.66 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：75.66 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK975	文件：75.66 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：75.66 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK975	文件：41.51 Kbytes Page：8 Pages	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：41.51 Kbytes 页数：8 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SP0320T2B0-12	文件：0 bytes Page：0 Pages		CONCEPT 上传：深圳德田科技有限公司	CONCEPT
2SP0430T2A0C-FF1800R17IP5	文件：0 bytes Page：0 Pages	模块	Power Integrations 上传：深圳市跃创芯科技有限公司	Power Integrations

更多2SK975TZ-E供应商更新时间2026-4-21 23:00:00