FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

FAST SWITCHING N-CHANNEL SILICON POWER MOSFET

文件：175.42 Kbytes 页数：4 Pages

NEC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：323.44 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=12A Low RDS(on) No second breakdown

文件：178.92 Kbytes 页数：4 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=27A Low RDS(on) No second breakdown

文件：174.14 Kbytes 页数：4 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large Current Switching : ID(DC)=21A No Second Breakdown

文件：176.96 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large current switching : ID(DC)=26A No Second Breakdown

文件：176.49 Kbytes 页数：4 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.98 Kbytes 页数：2 Pages

ISC

无锡固电

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：115.61 Kbytes 页数：3 Pages

NEC

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Fast Switching Speed

文件：68.81 Kbytes 页数：2 Pages

ISC

无锡固电