Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 0.3Ω (typ.) ● High switching rate : tf = 120ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Application ● No contact relay ● Solenoid drvie ● Motor drive ● Control equipment ● Switching power source

文件：41.06 Kbytes 页数：1 Pages

PANASONIC

松下

Fast Switching Speed

DESCRIPTION • Drain Current –ID=15A@ TC=25℃ • Drain Source Voltage- : VDSS=400V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：68.4 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel Power FMOS FET

Panasonic

松下

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 0.3Ω (typ.) ● High switching rate : tf = 120ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Application ● No contact relay ● Solenoid drvie ● Motor drive ● Control equipment ● Switching power source

文件：41.06 Kbytes 页数：1 Pages

PANASONIC

松下

Fast Switching Speed

DESCRIPTION • Drain Current –ID=15A@ TC=25℃ • Drain Source Voltage- : VDSS=450V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：68.39 Kbytes 页数：2 Pages

ISC

无锡固电