Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：67.7 Kbytes 页数：1 Pages

Panasonic

松下

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：67.7 Kbytes 页数：1 Pages

Panasonic

松下

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：65.239 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOS Field Effect Power Transistor

DESCRIPTION The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES ● Gate Drive - Logic level - ● Low RDS(on) ● No Secondary Breakdown

文件：95.43 Kbytes 页数：3 Pages

NEC

瑞萨

N CHANNEL MOS FIELD POWER TRANSISTOR

DESCRIPTION The 2SK798 is N-channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver.)

文件：144.82 Kbytes 页数：3 Pages

NEC

瑞萨

Fast Switching Speed

文件：67.58 Kbytes 页数：2 Pages

ISC

无锡固电

2SK791

文件：40.76 Kbytes 页数：1 Pages

TOSHIBA

东芝

Fast Switching Speed

文件：66.84 Kbytes 页数：2 Pages

ISC

无锡固电

2SK792

文件：43.82 Kbytes 页数：1 Pages

TOSHIBA

东芝

Fast Switching Speed

文件：66.83 Kbytes 页数：2 Pages

ISC

无锡固电