Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：67.7 Kbytes 页数：1 Pages

PANASONIC

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Fast Switching Speed

文件：65.26 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-channel Power F-MOS FET

Panasonic

松下

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：65.239 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

文件：67.7 Kbytes 页数：1 Pages

PANASONIC

松下