SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 0.4 ΩMAX. (VGS= 10 V, ID=

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 0.4 ΩMAX. (VGS= 10 V, ID=

文件：198.14 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on

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RENESAS

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Silicon N Channel MOS FET High Speed Power Switching

Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance

文件：106.53 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance

文件：106.53 Kbytes 页数：7 Pages

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N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=3.8mΩ(typ.) • Input capacitance Ciss=12500pF (typ.) •4V drive

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SANYO

三洋

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-

文件：277.34 Kbytes 页数：8 Pages

RENESAS

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-

文件：277.34 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-

文件：277.34 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.65Ω(typ.) •10V drive • Input capacitance Ciss=600pF

文件：55.95 Kbytes 页数：5 Pages

SANYO

三洋