HF Amp, AF Amp Applications

HF Amplifier, AF Amplifier Applications Features • Large |yfs|. • Low noise. • Small Crss.

文件：67.19 Kbytes 页数：3 Pages

SANYO

三洋

N-Channel Junction Silicon FET N-Channel Junction Silicon FET

ONSEMI

安森美半导体

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4041 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super Low noise −115 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small area

文件：292.56 Kbytes 页数：7 Pages

RENESAS

瑞萨

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：238.78 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Avalanche resistance guarantee.

文件：40.15 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee.

文件：56.63 Kbytes 页数：4 Pages

SANYO

三洋

Switching Regulator Applications

文件：220.2 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：323.8 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

文件：220.2 Kbytes 页数：6 Pages

TOSHIBA

东芝