470 MHz Band Amplifier Applications

470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOSFET

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

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NEC

瑞萨

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 75 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

东芝

Radio-frequency power MOSFET

Application Scope：FRS/GMRS(470MHz)\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 3 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS 12 V ;

Toshiba

东芝

SWITCHING N-CHANNEL POWER MOSFET

Renesas

瑞萨