isc N-Channel MOSFET Transistor

文件：318.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：323.93 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

文件：288.54 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：401.55 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-channel power MOSFET

For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Gate-source surrender voltage VGSS : ± 30 guaranteed\nAvalanche energy capacity guaranteed: EAS 986 mJ\nHigh-speed switching: tf = 39 ns\n ;

Panasonic

松下

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n•Super low on-state resistance\n  RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)\n  RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)\n•Low C iss: C iss= 5500 pF TYP.\n•Built-in gate pr •Super low on-state resistance\n  RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)\n  RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)\n•Low C iss: C iss= 5500 pF TYP.\n•Built-in gate protection diode;

Renesas

瑞萨

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

Renesas Electronics America Inc