SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

文件：154.7 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

文件：287.93 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：401.55 Kbytes 页数：2 Pages

ISC

无锡固电

Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263

The 2SK3899-ZK is a Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263. • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 5500 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3899 Data SheetPDF281 ;

Renesas

瑞萨