N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)

* 1 Chip Dual Type * Recommended for First Differential Stages of DC Amplifiers * Good Pair Characteristics * Complementary to 2SJ109

文件：240.83 Kbytes 页数：5 Pages

TOSHIBA

东芝

HSTM PACKAGE SERIES

Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone

文件：69.01 Kbytes 页数：1 Pages

TOSHIBA

东芝

N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)

Toshiba

东芝

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Super FAP-G Series

文件：109.71 Kbytes 页数：4 Pages

FUJI

富士通

Silicon N-channel power MOSFET

For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Features Gate-source surrender voltage VGSS : ± 30 guaranteed Avalanche energy capacity guaranteed: EAS > 986 mJ High-speed switching: tf = 39 ns

文件：277.42 Kbytes 页数：4 Pages

PANASONIC

松下

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

文件：154.7 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low On-state resistance RDS(on)1=5.3mÙMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mÙMAX.(VGS=4.5V,ID=42A) Low Ciss:Ciss = 5500 pF TYP.

文件：43.56 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

文件：287.93 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

文件：287.93 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

文件：154.7 Kbytes 页数：8 Pages

NEC

瑞萨