Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications and Motor Drive Applications

Switching Regulator, DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS

文件：231.09 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：330.91 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 70 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

东芝