isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：400.89 Kbytes 页数：2 Pages

ISC

无锡固电

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.

文件：41.7 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：327.2 Kbytes 页数：2 Pages

ISC

无锡固电

TOS

上传：深圳市赛美科科技有限公司

TO-247

TOSHIBA

东芝

上传：深圳鹏达晟电子有限公司