isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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无锡固电

Power MOSFET SuperFAP-G series Target Specification

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富士通

N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

文件：277.06 Kbytes 页数：4 Pages

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N-CHANNEL SILICON POWER MOSFET

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