isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.57Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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无锡固电

N-CHANNEL SILICON POWER MOSFET Super FAP-G Series

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N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

文件：202.62 Kbytes 页数：4 Pages

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功率MOSFET 600V-700V

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