Fuji Power MOSFET SuperFAP-G series Target Specification

Features 1. High speed switching 2. Low on-resistance 3. No secondary breadown 4. Low driving power 5. Avalanche-proof

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Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

2SK3683 / N-CHANNEL SILICON POWER MOSFET / Super FAP-G Series

Features1. High speed switching\n2. Low on-resistance\n3. No secondary breadown\n4. Low driving power\n5. Avalanche-proof

FUJI

富士通

TOS

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TO-247

TOSHIBA

东芝

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