isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：326.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：400.47 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件：253.77 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：110.74 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：253.77 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：110.74 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：253.77 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：110.74 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件：253.77 Kbytes 页数：4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

FUJI

富士通