N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：110.74 Kbytes 页数：4 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：324.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

文件：1.02791 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

功率MOSFET 100V-300V

FUJI

富士通