SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES\n•4.5V drive available.\n•Low on-state resistance,\nRDS •4.5V drive available.\n•Low on-state resistance,\nRDS(on)1= 9.0 mΩ MAX. (VGS= 10 V, ID= 24 A)\n•Low gate charge\nQG= 21 nC TYP. (VDD= 16 V, VGS= 10 V, ID= 48 A)\n•Built-in gate protection diode\n•Surface mount device available;

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