MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance

文件：82.63 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features ● 4.5V drive available. ● Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) ● Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) ● Built-in gate protection diode ● Surface mount device available

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KEXIN

科信电子

isc N-Channel MOSFET Transistor

文件：334.06 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES\n•4.5V drive available.\n•Low on-state resistance,\nRDS •4.5V drive available.\n•Low on-state resistance,\nRDS(on)1= 9.0 mΩ MAX. (VGS= 10 V, ID= 24 A)\n•Low gate charge\nQG= 21 nC TYP. (VDD= 16 V, VGS= 10 V, ID= 48 A)\n•Built-in gate protection diode\n•Surface mount device available;

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance

文件：82.63 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d

文件：249.17 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d

文件：249.17 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance

文件：82.63 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance

文件：82.63 Kbytes 页数：8 Pages

NEC

瑞萨