Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 0.29 Ω(typ.) • High forward transfer admittance: |Yfs| = 5.8 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDSS= 450 V) • Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 mA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Switching Regulator Applications

文件：181.45 Kbytes 页数：6 Pages

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Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID 13 A \nPower Dissipation PD 100 W \nDrain-Source voltage VDSS 450 V ;

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Switching Regulator Applications

文件：181.45 Kbytes 页数：6 Pages

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