首页 >2SK3511>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SK3511

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

文件:85.86 Kbytes 页数:8 Pages

NEC

瑞萨

2SK3511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

文件:226.91 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3511

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 5900 pF TYP. ● Built-in gate protection diode

文件:44.1 Kbytes 页数:1 Pages

KEXIN

科信电子

2SK3511

isc N-Channel MOSFET Transistor

文件:332.99 Kbytes 页数:2 Pages

ISC

无锡固电

2SK3511

Power MOSFETs-Power MOSFETs for Automotive

Renesas

瑞萨

2SK3511-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

文件:226.91 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

文件:85.86 Kbytes 页数:8 Pages

NEC

瑞萨

2SK3511-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

文件:85.86 Kbytes 页数:8 Pages

NEC

瑞萨

2SK3511-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

文件:226.91 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

文件:226.91 Kbytes 页数:10 Pages

RENESAS

瑞萨

技术参数

  • Ciss (pF) typ.:

    5900

  • Package Type:

    TO-220AB

  • Vgs (off) (V) max.:

    4

  • Nch/Pch:

    Nch

  • VGSS (V):

    20

  • Number of Channels:

    Single

  • Pch (W):

    100

  • Automotive:

    YES

  • Application:

    Low Voltage General Switching

  • VDSS (V) max.:

    75

  • Mounting Type:

    Through Hole

  • ID (A):

    83

  • QG (nC) typ.:

    100

  • RDS (ON) (mohm) max. @10V or 8V:

    12.5

供应商型号品牌批号封装库存备注价格
NEC
24+
TO-220AB
8866
询价
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
24+
TO-220
9600
原装现货,优势供应,支持实单!
询价
VBSEMI/台湾微碧
23+
T0-220
50000
全新原装正品现货,支持订货
询价
NEC
2022+
TO-220AB
12888
原厂代理 终端免费提供样品
询价
NEC
26+
WQFN10
86720
全新原装正品价格最实惠 假一赔百
询价
NEC
23+
TO-220
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NEC
23+
08+
6500
专注配单,只做原装进口现货
询价
NEC
09+08+
TO-220
256
只做原装正品
询价
NEC
24+
TO-220
43200
郑重承诺只做原装进口现货
询价
更多2SK3511供应商 更新时间2026-6-1 16:41:00