N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：103 Kbytes 页数：4 Pages

FUJI

富士通

N CHANNEL SILICON POWER MOSET

■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：113.5 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

■ Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof ■ Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：109.96 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES • Automati

文件：114.28 Kbytes 页数：5 Pages

NEC

瑞萨

丝印：E1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable syst

文件：247.9 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-Channel MOSFET

■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON)

文件：1.18401 Mbytes 页数：3 Pages

KEXIN

科信电子

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 26 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) • Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V,

文件：164.65 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier FEATURES • 4.5 V drive available • Low on-state resistance

文件：143.55 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

FEATURES ● 4.5 V drive available ● Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) ● Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) ● Built-in G-S protection diode ● Surface mount package available

文件：46.77 Kbytes 页数：1 Pages

KEXIN

科信电子