SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A) • Low Ciss: Ciss = 980

文件：68.83 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)

文件：267.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：331.14 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件：267.71 Kbytes 页数：10 Pages

RENESAS

瑞萨