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2SK3353

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3353

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ●LowCiss:Ciss=4650pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SK3353

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3353-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3353-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3353-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-S

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3353-Z

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3353(0)-Z-E1-AZ

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-AZ

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-Z-E1-AZ

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3353-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3353-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3353-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

详细参数

  • 型号:

    2SK3353

  • 制造商:

    KEXIN

  • 制造商全称:

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述:

    MOS Field Effect Transistor

供应商型号品牌批号封装库存备注价格
NEC
2019+全新原装正品
TO263
8950
BOM配单专家,发货快,价格低
询价
NEC
23+
TO-263
35890
询价
NEC
08+(pbfree)
TO-220AB
8866
询价
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
2017+
TO-263
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NEC
23+
TO-220AB
7600
全新原装现货
询价
R
2022+
T0-220
5000
全现原装公司现货
询价
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
VB
2019
T0-220
55000
绝对原装正品假一罚十!
询价
R
23+
T0-TO-220
35400
全新原装真实库存含13点增值税票!
询价
更多2SK3353供应商 更新时间2024-4-27 16:36:00