TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Fast reverse recovery time : trr = 60 ns (typ.) ● Built-in high-speed free-wheeling diode ● Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.) ● High forward transfer admittance : |Yfs| = 3.8 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS =

文件：261.01 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：323.49 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Switching Regulator Applications

文件：865.37 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor

Toshiba

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件：865.37 Kbytes 页数：6 Pages

TOSHIBA

东芝